onsemi 650 V 50 A Schottky Diode Schottky 2-Pin TO-247
- RS 제품 번호:
- 195-2623
- 제조사 부품 번호:
- FFSH5065B-F085
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩553,527.00
재고있음
- 추가로 2026년 5월 04일 부터 360 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 30 | ₩18,450.90 | ₩553,544.55 |
| 60 - 90 | ₩18,051.15 | ₩541,534.50 |
| 120 + | ₩17,690.40 | ₩530,694.45 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 195-2623
- 제조사 부품 번호:
- FFSH5065B-F085
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Schottky Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 50A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | EliteSiC | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1358A | |
| Peak Reverse Current Ir | 40μA | |
| Maximum Forward Voltage Vf | 2.4V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Mount Type Through Hole | ||
Product Type Schottky Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 50A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series EliteSiC | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1358A | ||
Peak Reverse Current Ir 40μA | ||
Maximum Forward Voltage Vf 2.4V | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Height 20.82mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 50A, 650V, D2, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
PPAP Capable
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
관련된 링크들
- onsemi 650 V 50 A Schottky Diode Schottky 2-Pin TO-247 FFSH5065B-F085
- onsemi 650 V 60 A Diode Schottky 2-Pin TO-247
- onsemi 650 V 60 A Diode Schottky 2-Pin TO-247 FFSH5065A
- onsemi 650 V 40 A Schottky Diode Schottky 3-Pin TO-247
- onsemi 650 V 14.4 A Schottky Diode Schottky 3-Pin TO-247
- onsemi 650 V 10 A Diode Schottky 2-Pin TO-247
- onsemi 650 V 20 A Diode Schottky 2-Pin TO-247
- onsemi 650 V 20 A Schottky Diode Schottky 3-Pin TO-247 FFSH2065BDN-F085