onsemi 650 V 27 A Schottky Diode Schottky 3-Pin D2PAK
- RS 제품 번호:
- 185-7990
- 제조사 부품 번호:
- FFSB1065B-F085
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
- RS 제품 번호:
- 185-7990
- 제조사 부품 번호:
- FFSB1065B-F085
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Mount Type | Surface | |
| Product Type | Schottky Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 27A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | EliteSiC | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 45A | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Reverse Current Ir | 160A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.58mm | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Mount Type Surface | ||
Product Type Schottky Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 27A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series EliteSiC | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 45A | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Reverse Current Ir 160A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.58mm | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard AEC-Q101 | ||
비준수
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, D2PAK
Automotive Silicon Carbide (SiC) Schottky Diode, 650 V
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175 oC
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
관련된 링크들
- onsemi 650 V 27 A Schottky Diode Schottky 3-Pin D2PAK FFSB1065B-F085
- onsemi 650 V 73 A Schottky Diode Schottky 3-Pin D2PAK
- onsemi 650 V 8 A Schottky Diode Schottky 2-Pin D2PAK
- onsemi 650 V 10.1 A Schottky Diode Schottky 2-Pin D2PAK
- onsemi 650 V 20 A Diode Schottky 3-Pin D2PAK
- onsemi 650 V 73 A Schottky Diode Schottky 3-Pin D2PAK FFSB3065B-F085
- onsemi 650 V 8 A Schottky Diode Schottky 2-Pin D2PAK FFSB0665B-F085
- onsemi 650 V 10.1 A Schottky Diode Schottky 2-Pin D2PAK FFSB0865B-F085
