제조사부품번호

onsemi 1200 V 77 A Diode Schottky 2-Pin TO-247

RS 제품 번호:: 178-4273
제조사 부품 번호:: FFSH50120A
제조업체:: onsemi

onsemi 1200 V 77 A Diode Schottky 2-Pin TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩677,082.00

재고있음

270 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 30	₩22,569.40	₩677,065.08
60 - 90	₩22,118.20	₩663,529.08
120 +	₩21,674.52	₩650,252.52

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-4273
제조사 부품 번호:: FFSH50120A
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Mount Type	Through Hole
	Product Type	Diode
	Package Type	TO-247
	Maximum Continuous Forward Current If	77A
	Peak Reverse Repetitive Voltage Vrrm	1200V
	Diode Configuration	Single
	Rectifier Type	Schottky
	Pin Count	2
	Minimum Operating Temperature	-55°C
	Peak Non-Repetitive Forward Surge Current Ifsm	1.7kA
	Maximum Forward Voltage Vf	1.75V
	Peak Reverse Current Ir	400μA
	Maximum Operating Temperature	175°C
	Height	20.82mm
	Length	15.87mm
	Diameter	6.85 mm
	Width	4.82 mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Mount Type Through Hole
	Product Type Diode
	Package Type TO-247
	Maximum Continuous Forward Current If 77A
	Peak Reverse Repetitive Voltage Vrrm 1200V
	Diode Configuration Single
	Rectifier Type Schottky
	Pin Count 2
	Minimum Operating Temperature -55°C
	Peak Non-Repetitive Forward Surge Current Ifsm 1.7kA
	Maximum Forward Voltage Vf 1.75V
	Peak Reverse Current Ir 400μA
	Maximum Operating Temperature 175°C
	Height 20.82mm
	Length 15.87mm
	Diameter 6.85 mm
	Width 4.82 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet FFSH50120A

COO (Country of Origin):: CN

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D1, TO-247-2L Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D1, TO-247-2L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Max Junction Temperature 175 °C

Positive Temperature Coefficient

Ease of Paralleling

No Reverse Recovery / No Forward Recovery

Applications

PFC

Industrial Power

Solar

EV Charger

UPS

Welding

onsemi 1200 V 77 A Diode Schottky 2-Pin TO-247

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D1, TO-247-2L Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D1, TO-247-2L

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