제조사부품번호

Vishay 120 V 40 A Diode Schottky 3-Pin D2PAK

RS 제품 번호:: 165-6060
제조사 부품 번호:: V40DM120C-M3/I
제조업체:: Vishay

Vishay 120 V 40 A Diode Schottky 3-Pin D2PAK

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대량 구매 할인 기용 가능

Subtotal (1 reel of 2000 units)*

₩6,820,640.00

일시적 품절

2026년 4월 29일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
2000 - 8000	₩3,410.32	₩6,822,520.00
10000 +	₩3,342.64	₩6,686,032.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 165-6060
제조사 부품 번호:: V40DM120C-M3/I
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Diode
	Mount Type	Surface
	Package Type	TO-263
	Maximum Continuous Forward Current If	40A
	Peak Reverse Repetitive Voltage Vrrm	120V
	Diode Configuration	Common Cathode
	Series	V40
	Rectifier Type	Schottky
	Pin Count	3
	Peak Reverse Current Ir	32mA
	Minimum Operating Temperature	-40°C
	Peak Non-Repetitive Forward Surge Current Ifsm	250A
	Maximum Forward Voltage Vf	890mV
	Maximum Operating Temperature	150°C
	Diameter	10.2 mm
	Length	10.2mm
	Height	1.8mm
	Width	8.99 mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Vishay
	Product Type Diode
	Mount Type Surface
	Package Type TO-263
	Maximum Continuous Forward Current If 40A
	Peak Reverse Repetitive Voltage Vrrm 120V
	Diode Configuration Common Cathode
	Series V40
	Rectifier Type Schottky
	Pin Count 3
	Peak Reverse Current Ir 32mA
	Minimum Operating Temperature -40°C
	Peak Non-Repetitive Forward Surge Current Ifsm 250A
	Maximum Forward Voltage Vf 890mV
	Maximum Operating Temperature 150°C
	Diameter 10.2 mm
	Length 10.2mm
	Height 1.8mm
	Width 8.99 mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

TMBS - Trench MOS Barrier Schottky Rectifiers, 30A to 80A, Vishay Semiconductor

The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over Planar Schottky rectifiers. At operating voltages of 45V and above Planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.

Patented Trench Structure

Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters

High power density and low forward voltage

Vishay 120 V 40 A Diode Schottky 3-Pin D2PAK

TMBS - Trench MOS Barrier Schottky Rectifiers, 30A to 80A, Vishay Semiconductor

Features

Schottky Rectifiers, Vishay Semiconductor

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