STMicroelectronics 650 V 10 A Schottky Diode Schottky 2-Pin TO-220AC STPSC10065D

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Subtotal 14 units (supplied in a tube)*

₩89,600.00

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  • 2027년 1월 05일 부터 배송
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* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
164-7015P
제조사 부품 번호:
STPSC10065D
제조업체:
STMicroelectronics
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모두 선택

브랜드

STMicroelectronics

Mount Type

Through Hole

Product Type

Schottky Diode

Package Type

TO-220AC

Maximum Continuous Forward Current If

10A

Peak Reverse Repetitive Voltage Vrrm

650V

Series

STPSC10065

Diode Configuration

Single

Rectifier Type

Schottky

Pin Count

2

Maximum Forward Voltage Vf

1.65V

Minimum Operating Temperature

-40°C

Peak Non-Repetitive Forward Surge Current Ifsm

48A

Peak Reverse Current Ir

130μA

Maximum Operating Temperature

175°C

Standards/Approvals

ECOPACK, UL94 V0

Length

10.4mm

Height

15.75mm

Automotive Standard

No

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases

No or negligible reverse recovery

Switching behavior independent of temperature

Dedicated to PFC applications

High forward surge capability

Operating Tj from -40 °C to 175 °C

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