STMicroelectronics 650 V 10 A Schottky Diode Schottky 2-Pin TO-220AC

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Subtotal 14 units (supplied in a tube)*

₩89,600.00

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  • 2027년 2월 23일 부터 배송
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포장 옵션
RS 제품 번호:
164-7015P
제조사 부품 번호:
STPSC10065D
제조업체:
STMicroelectronics
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모두 선택

브랜드

STMicroelectronics

Mount Type

Through Hole

Product Type

Schottky Diode

Package Type

TO-220AC

Maximum Continuous Forward Current If

10A

Peak Reverse Repetitive Voltage Vrrm

650V

Diode Configuration

Single

Series

STPSC10065

Rectifier Type

Schottky

Pin Count

2

Peak Reverse Current Ir

900μA

Minimum Operating Temperature

-40°C

Peak Non-Repetitive Forward Surge Current Ifsm

210A

Maximum Forward Voltage Vf

1.65V

Maximum Operating Temperature

175°C

Height

15.75mm

Length

10.4mm

Standards/Approvals

ECOPACK, UL94 V0

Width

4.6mm

Automotive Standard

No

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases

No or negligible reverse recovery

Switching behavior independent of temperature

Dedicated to PFC applications

High forward surge capability

Operating Tj from -40 °C to 175 °C

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