STMicroelectronics 1.2 kV 10 A Diode Schottky 2-Pin DO-247 LL STPSC10H12WL
- RS 제품 번호:
- 164-6968
- 제조사 부품 번호:
- STPSC10H12WL
- 제조업체:
- STMicroelectronics
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대량 구매 할인 받기
150개 더 담고 ₩31,500.00 할인 받기
View bulk pricing optionsSubtotal (1 tube of 30 units)*
₩315,900.00
마지막 RS 재고
- 최종적인 90 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | Per Tube* | 절감 |
|---|---|---|---|
| 30 - 120 | ₩10,530.00 | ₩315,882.00 | - |
| 150 + | ₩10,320.00 | ₩309,600.00 | ₩31,500.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 164-6968
- 제조사 부품 번호:
- STPSC10H12WL
- 제조업체:
- STMicroelectronics
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | DO-247 LL | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 400μA | |
| Maximum Forward Voltage Vf | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 420A | |
| Maximum Operating Temperature | 175°C | |
| Height | 21.46mm | |
| Length | 16.26mm | |
| Diameter | 3.56mm | |
| Width | 5.31mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type DO-247 LL | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 400μA | ||
Maximum Forward Voltage Vf 2.25V | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 420A | ||
Maximum Operating Temperature 175°C | ||
Height 21.46mm | ||
Length 16.26mm | ||
Diameter 3.56mm | ||
Width 5.31mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
Operating from -40 °C to 175 °C
Low VF
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