BGA7H1N6E6327XTSA1 Infineon, RF Amplifier Low Noise Amplifier, 12.5 dB 2690 MHz, 6-Pin TSNP-6-2
- RS 제품 번호:
- 273-5224
- 제조사 부품 번호:
- BGA7H1N6E6327XTSA1
- 제조업체:
- Infineon
100 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(10개가 1팩안에)
₩700.309
| 수량 | 한팩당 | 한팩당* |
| 10 - 990 | ₩700.309 | ₩7,004.819 |
| 1000 - 1990 | ₩550.243 | ₩5,505.881 |
| 2000 - 4990 | ₩538.169 | ₩5,386.863 |
| 5000 - 9990 | ₩529.544 | ₩5,288.543 |
| 10000 + | ₩519.195 | ₩5,190.224 |
| *다른 단위에 대한 가격 표시 | ||
- RS 제품 번호:
- 273-5224
- 제조사 부품 번호:
- BGA7H1N6E6327XTSA1
- 제조업체:
- Infineon
제정법과 컴플라이언스
- COO (Country of Origin):
- MY
제품 세부 사항
The Infineon RF Amplifier is a front end low noise amplifier for LTE which covers a wide frequency range from 2300 MHz to 2690 MHz. The LNA provides 12.5 dB gain and 0.60 dB noise figure at a current consumption of 4.7 mA. This RF amplifier is base on Silicon Germanium technology. It operates from 1.5 V to 3.3 V supply voltage.
Pb free package
RoHS compliant
Low noise figure
Digitally on off switch
Low current consumption
Only 1 external SMD component necessary
RoHS compliant
Low noise figure
Digitally on off switch
Low current consumption
Only 1 external SMD component necessary
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
사양
속성 | 값 |
|---|---|
| Amplifier Type | Low Noise Amplifier |
| Typical Power Gain | 12.5 dB |
| Typical Noise Figure | 0.6dB |
| Number of Channels per Chip | 1 |
| Maximum Operating Frequency | 2690 MHz |
| Package Type | TSNP-6-2 |
| Pin Count | 6 |