BGA5H1BN6E6327XTSA1 Infineon, RF Amplifier Low Noise, 18.1 dB 2690 MHz, 6-Pin TSNP-6-10
- RS 제품 번호:
- 258-0656
- 제조사 부품 번호:
- BGA5H1BN6E6327XTSA1
- 제조업체:
- Infineon
11990 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(10개가 1팩안에)
₩546.793
| 수량 | 한팩당 | 한팩당* |
| 10 - 10 | ₩546.793 | ₩5,473.108 |
| 20 - 90 | ₩488.147 | ₩4,884.917 |
| 100 - 240 | ₩434.675 | ₩4,345.023 |
| 250 - 490 | ₩426.05 | ₩4,258.778 |
| 500 + | ₩417.426 | ₩4,174.258 |
| *다른 단위에 대한 가격 표시 | ||
- RS 제품 번호:
- 258-0656
- 제조사 부품 번호:
- BGA5H1BN6E6327XTSA1
- 제조업체:
- Infineon
제정법과 컴플라이언스
제품 세부 사항
The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.
Low current consumption of 8.5 mA
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
사양
속성 | 값 |
|---|---|
| Amplifier Type | Low Noise |
| Typical Power Gain | 18.1 dB |
| Typical Output Power | 60mW |
| Typical Noise Figure | 1.2dB |
| Maximum Operating Frequency | 2690 MHz |
| Package Type | TSNP-6-10 |
| Pin Count | 6 |