BGAP2S20AE6327XTSA1 Infineon Pre-Driver for Wireless Infrastructure Applications 34.8 dB, 16-Pin 2700 MHz TSNP-16
- RS 제품 번호:
- 349-418
- 제조사 부품 번호:
- BGAP2S20AE6327XTSA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩11,956.80
일시적 품절
- 2026년 6월 18일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩11,956.80 |
| 10 - 99 | ₩10,772.40 |
| 100 - 499 | ₩9,907.60 |
| 500 - 999 | ₩9,212.00 |
| 1000 + | ₩8,253.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-418
- 제조사 부품 번호:
- BGAP2S20AE6327XTSA1
- 제조업체:
- Infineon
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참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Pre-Driver for Wireless Infrastructure Applications | |
| Operating Frequency | 2700 MHz | |
| Technology | BiCMOS | |
| Gain | 34.8dB | |
| Minimum Supply Voltage | 4.75V | |
| Package Type | TSNP-16 | |
| Pin Count | 16 | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Operating Temperature | -40°C | |
| Third Order Intercept OIP3 | 34.2dBm | |
| Noise Figure | 4.3dB | |
| Maximum Operating Temperature | 115°C | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Height | 8mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Pre-Driver for Wireless Infrastructure Applications | ||
Operating Frequency 2700 MHz | ||
Technology BiCMOS | ||
Gain 34.8dB | ||
Minimum Supply Voltage 4.75V | ||
Package Type TSNP-16 | ||
Pin Count 16 | ||
Maximum Supply Voltage 5.5V | ||
Minimum Operating Temperature -40°C | ||
Third Order Intercept OIP3 34.2dBm | ||
Noise Figure 4.3dB | ||
Maximum Operating Temperature 115°C | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Height 8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input and outputs are single-ended and internally matched to 50 Ω.
BiCMOS technology for an optimized performance
High gain and high power for fewer components in line up
Internal matching and saving external matching components
Easy design in and small area footprint
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