Infineon EB 2ED2410 3D 1BCD MOSFET Gate Driver for Gate Driver, Power MOSFET for Evaluation Mother/Daughterboards User
- RS 제품 번호:
- 273-2059
- 제조사 부품 번호:
- EB2ED24103D1BCDTOBO1
- 제조업체:
- Infineon
일시 품절-다음 입고 날짜는 19/08/2024 (일/월/년) 이며, 그 후 5-10영업일내 홍콩에서 발송. 정확한 입고 수량에 대한 문의는 krenquiry@rs-components.com 로 연락주세요.
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단가 개당
₩140,023.932
수량 | 한팩당 |
1 + | ₩140,023.932 |
- RS 제품 번호:
- 273-2059
- 제조사 부품 번호:
- EB2ED24103D1BCDTOBO1
- 제조업체:
- Infineon
제정법과 컴플라이언스
제품 세부 사항
EiceDRIVER™ APD 2ED2410-EM - 24 V evaluation MOSFET daughterboard, common drain
This daughterboard belongs to a family of evaluation boards that can be combined with the 2ED2410-EM 24 V evaluation motherboard(EB 2ED2410 3M). These daughterboards are used to address different MOSFET and shunt arrangements typically found in modern automotive power distributions for 12 and 24 V board nets.
This daughterboard EB 2ED2410 3D 1BCD is addressing one load channel and consisting of two 60 V OptiMOSTM5 power MOSFET (1.1 mOhm) in a back2back common drain configuration.
This daughterboard EB 2ED2410 3D 1BCD is addressing one load channel and consisting of two 60 V OptiMOSTM5 power MOSFET (1.1 mOhm) in a back2back common drain configuration.
Following other daughterboards are available:
•EB 2ED2410 3D 1BCS: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCDP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt, with pre-charging
•EB 2ED2410 3D 1BCSP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt, with pre-charging
•EB 2ED2410 3D 1BCDP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt, with pre-charging
•EB 2ED2410 3D 1BCSP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt, with pre-charging
Summary of Features
•Suitable for 12 and 24 V board nets
•Combination with 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M)
•0,5 mOhm shunt resistor
•60 V OptiMOSTM5 power MOSFET (1,1 Ohm) suitable for 12 and 24 V board nets
•MOSFET temperature monitoring with NTC resistors
•Nominal current up to 20 A continuous or 30 A for 10 min
•Combination with 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M)
•0,5 mOhm shunt resistor
•60 V OptiMOSTM5 power MOSFET (1,1 Ohm) suitable for 12 and 24 V board nets
•MOSFET temperature monitoring with NTC resistors
•Nominal current up to 20 A continuous or 30 A for 10 min
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
사양
속성 | 값 |
---|---|
Power Management Function | MOSFET Gate Driver |
For Use With | Evaluation Mother/Daughterboards User Guide |
Kit Classification | Evaluation Board |
Featured Device | Gate Driver, Power MOSFET |
Kit Name | EB 2ED2410 3D 1BCD |