Renesas Electronics 3A Source, 4A Sink, 100V, High Frequency Half-Bridge Drivers with HI/LI or Tri-Level PWM Input and
- RS 제품 번호:
- 249-8414
- 제조사 부품 번호:
- HIP2211EVAL2Z
- 제조업체:
- Renesas Electronics
- RS 제품 번호:
- 249-8414
- 제조사 부품 번호:
- HIP2211EVAL2Z
- 제조업체:
- Renesas Electronics
제정법과 컴플라이언스
제품 세부 사항
The Renesas Electronics boards are designed to provide a quick and comprehensive method for evaluating the HIP2211 100V, high-frequency half-bridge driver for driving the gates of two N-channel MOSFETs in a half-bridge configuration. Two N-channel MOSFETs (with dual footprint supporting multiple packages such as TO220 and DPAK) and an inductor-capacitor LC filter are included on the evaluation boards to allow for the evaluation of a half-bridge driven load such as a synchronous buck switching regulator. The HIP2211 half-bridge driver is offered in an 8 Ld SOIC, 8 Ld DFN or 10 Ld DFN package (with enhanced thermal EPAD). This evaluation board is designed for the 10 Ld DFN package. The 8 Ld DFN package can fit on this board as well. Both boards operate from a supply voltage of 6V to 18V DC with the capability of driving both the high-side and the low-side MOSFETs in a 100V half-bridge configuration.
3A source and 4A sink NMOS gate drivers
Internal level shifter and bootstrap diode for gate driver on high-side NFET
Up to 100V high-side bootstrap reference
6V to 18V bias supply operation
Fast 15ns typical propagation delay and 2ns typical propagation delay match supports up to 1MHz operation
Internal level shifter and bootstrap diode for gate driver on high-side NFET
Up to 100V high-side bootstrap reference
6V to 18V bias supply operation
Fast 15ns typical propagation delay and 2ns typical propagation delay match supports up to 1MHz operation
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