Infineon 4Mbit 45ns NVRAM, 44-Pin TSOP, CY14B104LA-ZS25XI
- RS 제품 번호:
- 194-9071
- 제조사 부품 번호:
- CY14B104LA-ZS25XI
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 tray of 135 units)*
₩7,959,675.60
재고있음
- 270 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tray* |
|---|---|---|
| 135 - 135 | ₩58,960.56 | ₩7,959,649.28 |
| 270 - 405 | ₩57,781.80 | ₩7,800,441.48 |
| 540 + | ₩56,625.60 | ₩7,644,429.68 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 194-9071
- 제조사 부품 번호:
- CY14B104LA-ZS25XI
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Memory Size | 4Mbit | |
| Organisation | 512K x 8 bit | |
| Interface Type | Parallel | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 45ns | |
| Mounting Type | Surface Mount | |
| Package Type | TSOP | |
| Pin Count | 44 | |
| Dimensions | 18.51 x 10.26 x 1.04mm | |
| Length | 18.51mm | |
| Width | 10.26mm | |
| Height | 1.04mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Number of Words | 512K | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Temperature | -40 °C | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Memory Size 4Mbit | ||
Organisation 512K x 8 bit | ||
Interface Type Parallel | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 45ns | ||
Mounting Type Surface Mount | ||
Package Type TSOP | ||
Pin Count 44 | ||
Dimensions 18.51 x 10.26 x 1.04mm | ||
Length 18.51mm | ||
Width 10.26mm | ||
Height 1.04mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
Number of Words 512K | ||
Number of Bits per Word 8bit | ||
Minimum Operating Temperature -40 °C | ||
The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
관련된 링크들
- Infineon 4Mbit 45ns NVRAM, 44-Pin TSOP, CY14B104LA-ZS25XI
- Infineon SRAM, CY14B108N-ZSP45XI- 8Mbit
- Greenwich Instruments 256kbit 70ns NVRAM, 28-Pin PDIP, GR3281-HT
- STMicroelectronics 256kbit 70ns NVRAM, 28-Pin PCDIP, M48Z35Y-70PC1
- STMicroelectronics 64kbit 100ns NVRAM, 28-Pin PCDIP, M48T08-100PC1
- STMicroelectronics 64kbit 100ns NVRAM, 28-Pin PCDIP, M48Z08-100PC1
- STMicroelectronics 16kbit 70ns NVRAM, 24-Pin PCDIP, M48T02-70PC1
- STMicroelectronics 64kbit 150ns NVRAM, 28-Pin PCDIP, M48T08-150PC1
