N-Channel MOSFET, 179 A, 30 V, 3-Pin DPAK Infineon IRFR8314TRPBF

RS 제품 번호:: 915-5027
제조사 부품 번호:: IRFR8314TRPBF
제조업체:: Infineon

N-Channel MOSFET, 179 A, 30 V, 3-Pin DPAK Infineon IRFR8314TRPBF

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₩1,850.818

수량	한팩당	한팩당*
10 - 490	₩1,850.818	₩18,501.277
500 - 990	₩1,818.045	₩18,176.996
1000 +	₩1,785.272	₩17,845.815
*다른 단위에 대한 가격 표시

RS 제품 번호:: 915-5027
제조사 부품 번호:: IRFR8314TRPBF
제조업체:: Infineon

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제품 세부 사항

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

사양

속성	값
Channel Type	N
Maximum Continuous Drain Current	179 A
Maximum Drain Source Voltage	30 V
Package Type	DPAK (TO-252)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	3.1 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	6.73mm
Transistor Material	Si
Width	7.49mm
Typical Gate Charge @ Vgs	36 nC @ 4.5 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Height	2.39mm
Forward Diode Voltage	1V