N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-220AB Infineon IRFB4227PBF
- RS 제품 번호:
- 913-3932
- 제조사 부품 번호:
- IRFB4227PBF
- 제조업체:
- Infineon
일시 품절-다음 입고 날짜는 03/02/2025 (일/월/년) 이며, 그 후 5-10영업일내 홍콩에서 발송. 정확한 입고 수량에 대한 문의는 krenquiry@rs-components.com 로 연락주세요.
추가완료!
단가 개당가격(50개가 1튜브안에)
₩3,596.417
| 수량 | 한팩당 | Per Tube* |
| 50 - 50 | ₩3,596.417 | ₩179,846.699 |
| 100 - 150 | ₩3,518.796 | ₩175,931.176 |
| 200 + | ₩3,441.176 | ₩172,024.277 |
| *다른 단위에 대한 가격 표시 | ||
- RS 제품 번호:
- 913-3932
- 제조사 부품 번호:
- IRFB4227PBF
- 제조업체:
- Infineon
제정법과 컴플라이언스
- COO (Country of Origin):
- CN
제품 세부 사항
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
사양
속성 | 값 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 65 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TO-220AB |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 24 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 330 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Length | 10.66mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V |
| Width | 4.82mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Height | 9.02mm |
| Minimum Operating Temperature | -40 °C |