Infineon HEXFET Type P-Channel MOSFET, 5.8 A, 30 V Enhancement, 6-Pin TSOP IRFTS9342TRPBF
- RS 제품 번호:
- 907-5151
- 제조사 부품 번호:
- IRFTS9342TRPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 50 units)*
₩28,670.00
마지막 RS 재고
- 최종적인 2,200 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 50 - 700 | ₩573.40 | ₩28,651.20 |
| 750 - 1450 | ₩558.36 | ₩27,918.00 |
| 1500 + | ₩548.96 | ₩27,485.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 907-5151
- 제조사 부품 번호:
- IRFTS9342TRPBF
- 제조업체:
- Infineon
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 66mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.75 mm | |
| Height | 1.3mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Distrelec Product Id | 304-44-469 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type TSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 66mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Width 1.75 mm | ||
Height 1.3mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Distrelec Product Id 304-44-469 | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 5.8A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRFTS9342TRPBF
This MOSFET is designed for high efficiency across various applications, playing a critical role in electronic circuits that require enhanced performance and dependability. Its low on-resistance and significant current-handling capabilities contribute to energy efficiency and system stability in automation and electrical applications.
Features & Benefits
• Low Rds(on) improves energy efficiency
• Continuous drain current support of 5.8 A for effective performance
• Maximum drain-source voltage of 30 V ensures durability
• Surface mount design allows for compact, efficient layouts
• Operating temperature range of -55°C to +150°C enhances adaptability
Applications
• Used in battery-operated DC motor inverters
• Employed for system or load switching in varied circuits
• Applicable for drive operations within automation systems
• Utilised in power management systems for improved efficiency
How does this component perform under extreme temperatures?
It operates effectively within a wide temperature range from -55°C to +150°C, ensuring dependability in various environments.
What is the benefit of the low on-resistance feature?
A low Rds(on) Value decreases power loss in applications, leading to enhanced overall efficiency and thermal performance.
Can this device handle pulsed currents?
Yes, it can manage pulsed drain currents effectively, making it suitable for dynamic applications in electronics.
How is it mounted in circuits?
The device is designed for surface mount applications, facilitating Compact assembly and efficient space utilisation on PCBs.
What considerations should be taken when handling this component?
Users should ensure proper handling due to its sensitivity to voltage levels, adhering to specified maximum gate-source voltage limits.
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