Infineon HEXFET Type N-Channel MOSFET, 2.6 A, 150 V Enhancement, 4-Pin SOT-223 IRFL4315TRPBF

RS 제품 번호:: 865-5822
제조사 부품 번호:: IRFL4315TRPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 2.6 A, 150 V Enhancement, 4-Pin SOT-223 IRFL4315TRPBF

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 reel of 10 units)*

₩7,125.20

재고있음

6,270 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
10 - 620	₩712.52	₩7,125.20
630 - 1240	₩693.72	₩6,937.20
1250 +	₩682.44	₩6,824.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 865-5822
제조사 부품 번호:: IRFL4315TRPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.6A
	Maximum Drain Source Voltage Vds	150V
	Series	HEXFET
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	185mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	12nC
	Maximum Power Dissipation Pd	2.8W
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.5V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	1.8mm
	Length	6.7mm
	Standards/Approvals	No
	Width	3.7 mm
	Automotive Standard	No
	Distrelec Product Id	304-44-459

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.6A
	Maximum Drain Source Voltage Vds 150V
	Series HEXFET
	Package Type SOT-223
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 185mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 12nC
	Maximum Power Dissipation Pd 2.8W
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.5V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 1.8mm
	Length 6.7mm
	Standards/Approvals No
	Width 3.7 mm
	Automotive Standard No
	Distrelec Product Id 304-44-459

Infineon HEXFET Series MOSFET, 2.6A Maximum Continuous Drain Current, 2.8W Maximum Power Dissipation - IRFL4315TRPBF

This MOSFET is suitable for power applications, delivering solid performance and enhanced reliability in various environments. As a key component in switching applications, it enables efficient control of power delivery. Its surface mount design makes it a good fit for high-performance circuits that require low gate-to-drain charge, minimising switching losses, which is beneficial for users in the automation and electronics industries.

Features & Benefits

• Continuous drain current rating of 2.6A accommodates a range of applications

• Maximum drain-source voltage of 150V facilitates high-power operations

• Low Rds(on) of 185mΩ improves energy efficiency

• Operating temperature range from -55°C to +150°C supports dependable performance

• Gate threshold voltage is optimised for easier circuit design

• Fully characterised avalanche characteristics provide additional protection

Applications

• High-frequency DC-DC converters

• Power management systems for improved efficiency

• Switching power supplies for enhanced performance

What is the significance of the low Rds(on) value?

A low Rds(on) reduces power losses during operation, improving overall efficiency across multiple applications.

How does the wide temperature range affect usage?

The wide operating temperature range ensures reliable performance in extreme conditions, making it suitable for diverse environments.

Can it be used in both high and low-frequency applications?

Yes, it accommodates both high-frequency DC-DC converters and applications requiring low-frequency switching.

What should be considered for installation?

Proper circuit layout and thermal management should be taken into account to optimise performance during installation.

How does the gate threshold voltage impact circuit design?

The gate threshold voltage allows for better control over switching behaviour, facilitating easier design of the driving circuit.