Infineon HEXFET Type N-Channel MOSFET, 39 A, 80 V Enhancement, 3-Pin TO-252 IRLR2908TRPBF

RS 제품 번호:: 830-3354
제조사 부품 번호:: IRLR2908TRPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 39 A, 80 V Enhancement, 3-Pin TO-252 IRLR2908TRPBF

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RS 제품 번호:: 830-3354
제조사 부품 번호:: IRLR2908TRPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	39A
	Maximum Drain Source Voltage Vds	80V
	Package Type	TO-252
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	30mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	16 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	22nC
	Maximum Power Dissipation Pd	120W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Width	6.22 mm
	Length	6.73mm
	Height	2.39mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 39A
	Maximum Drain Source Voltage Vds 80V
	Package Type TO-252
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 30mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 16 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 22nC
	Maximum Power Dissipation Pd 120W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Width 6.22 mm
	Length 6.73mm
	Height 2.39mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 39A Maximum Continuous Drain Current, 120W Maximum Power Dissipation - IRLR2908TRPBF

This MOSFET is designed for versatility and efficiency across various applications that demand precise current control, particularly in space-constrained environments. Thanks to its HEXFET technology, it maintains effective performance at high temperatures, making it a suitable option for contemporary electronic and electrical systems. Its Ability to manage significant power dissipation while operating in challenging conditions adds to its relevance.

Features & Benefits

• Continuous drain current capability of up to 39A for demanding load applications

• Maximum drain-source voltage of 80V for enhanced reliability

• Low on-resistance of 30mΩ for improved energy efficiency

• Operates at high temperatures up to +175°C for rigorous environments

• Surface mount design facilitates easy installation and assembly

• Enhancement mode offers improved control for varied circuitry

Applications

• Employed in power supply circuits for effective switching

• Suitable for motor control requiring accurate current regulation

• Utilised within automotive systems for efficient power management

• Ideal for high-frequency switching circuits to enhance efficiency

• Adopted in industrial automation systems for superior performance

What are the thermal characteristics of this component?

The thermal resistance junction-to-case is approximately 1.3°C/W, which supports effective heat dissipation during operation, essential for maintaining optimal performance and reliability.

How do I ensure proper installation for optimal performance?

It is important to adhere to suitable PCB design guidelines, particularly focusing on minimising inductance and maximising thermal contact with the substrate to prevent overheating during operation.

Can it handle pulsed currents effectively?

Yes, it can support pulsed drain currents up to 150A, enabling management of transient conditions without compromising the device's integrity.

What is the significance of the RDS(on) Value in operations?

The low RDS(on) Value of 30mΩ is important as it reduces power losses during switching, enhancing overall circuit efficiency and performance.

How does the gate threshold voltage affect functionality?

With a threshold voltage between 1V and 2.5V, it allows for precise control, making it suitable for various electronic applications requiring accurate switching.