- RS 제품 번호:
- 826-9412
- 제조사 부품 번호:
- BSS316NH6327XTSA1
- 제조업체:
- Infineon
750 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(250개가 1릴안에)
₩182.839
수량 | 한팩당 | Per Reel* |
250 - 500 | ₩182.839 | ₩45,709.85 |
750 - 1250 | ₩177.665 | ₩44,545.543 |
1500 + | ₩175.94 | ₩43,855.583 |
*다른 단위에 대한 가격 표시 |
- RS 제품 번호:
- 826-9412
- 제조사 부품 번호:
- BSS316NH6327XTSA1
- 제조업체:
- Infineon
제정법과 컴플라이언스
제품 세부 사항
Infineon OptiMOS™2 Power MOSFET Family
Infineons OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
사양
속성 | 값 |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 1.4 A |
Maximum Drain Source Voltage | 30 V |
Package Type | SOT-23 |
Series | OptiMOS 2 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 280 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 500 mW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 1.3mm |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 0.6 nC @ 5 V |
Length | 2.9mm |
Transistor Material | Si |
Height | 0.9mm |
Minimum Operating Temperature | -55 °C |