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Test & Measurement
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Semiconductors
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Discrete Semiconductors
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MOSFETs
N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXYS IXFX150N30P3
RS 제품 번호:
802-4495P
제조사 부품 번호:
IXFX150N30P3
제조업체:
IXYS
모든 MOSFETs 열람하기
가격 개당(튜브에 담겨 공급됨)**
₩29,382.08
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장바구니
26 <재고있음> 5-9영업일내 홍콩 발송*
* 배송 날짜는 선택한 수량과 배송 주소에 따라 달라질 수 있습니다.
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₩29,382.08
** 참고 가격: 실제 구매가격과 다를 수 있습니다
포장 옵션
소량 포장
생산용 포장 (RS 제품 번호에 P를 포함)
RS 제품 번호:
802-4495P
제조사 부품 번호:
IXFX150N30P3
제조업체:
IXYS
참조 문서
제정법과 컴플라이언스
제품 세부 사항
사양
IXFK150N30P3, IXFX150N30P3, Polar3 HiPerFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Diode
ESD Control Selection Guide V1
ROHS 준수
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
속성
값
Channel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
300 V
Series
HiperFET, Polar3
Package Type
PLUS247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.3 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.21mm
Length
16.13mm
Typical Gate Charge @ Vgs
197 nC @ 10 V
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
21.34mm