onsemi UniFET Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220 FDP12N60NZ
- RS 제품 번호:
- 759-9175
- 제조사 부품 번호:
- FDP12N60NZ
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
사용할 수 없음
RS는 더 이상 이 제품을 입고하지 않습니다.
- RS 제품 번호:
- 759-9175
- 제조사 부품 번호:
- FDP12N60NZ
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | UniFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 650mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 240W | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 16.51mm | |
| Width | 4.83 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series UniFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 650mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 240W | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 16.51mm | ||
Width 4.83 mm | ||
Automotive Standard No | ||
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
관련된 링크들
- onsemi UniFET Type N-Channel MOSFET, 61 A, 200 V Enhancement, 3-Pin TO-220 FDP61N20
- onsemi UniFET Type N-Channel MOSFET, 51 A, 250 V Enhancement, 3-Pin TO-220 FDP51N25
- onsemi UniFET Type N-Channel MOSFET, 22 A, 500 V Enhancement, 3-Pin TO-220 FDP22N50N
- onsemi UniFET Type N-Channel MOSFET, 11.5 A, 500 V Enhancement, 3-Pin TO-220F FDPF12N50NZ
- onsemi UniFET Type N-Channel MOSFET, 33 A, 250 V Enhancement, 3-Pin TO-220AB FDP33N25
- onsemi UniFET Type N-Channel MOSFET, 75 A, 75 V Enhancement, 3-Pin TO-220AB FDP75N08A
- onsemi UniFET Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-220F FDPF10N60NZ
- onsemi UniFET Type N-Channel MOSFET, 51 A, 250 V Enhancement, 3-Pin TO-220