Infineon HEXFET Type N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-220 AUIRF540Z
- RS 제품 번호:
- 737-7458
- 제조사 부품 번호:
- AUIRF540Z
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩9,399.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 12 | ₩4,699.50 | ₩9,399.00 |
| 14 - 24 | ₩4,582.50 | ₩9,165.00 |
| 26 + | ₩4,524.00 | ₩9,048.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 737-7458
- 제조사 부품 번호:
- AUIRF540Z
- 제조업체:
- Infineon
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 26.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 92W | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.51mm | |
| Standards/Approvals | No | |
| Length | 10.66mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 26.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 92W | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 16.51mm | ||
Standards/Approvals No | ||
Length 10.66mm | ||
Automotive Standard AEC-Q101 | ||
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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