onsemi PowerTrench Type P-Channel MOSFET, 8.2 A, 40 V Enhancement, 8-Pin SOIC FDS4685
- RS 제품 번호:
- 671-0520
- Distrelec 제품 번호:
- 304-43-727
- 제조사 부품 번호:
- FDS4685
- 제조업체:
- onsemi
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 5 units)*
₩8,980.00
공급 부족
공급망의 제한으로 인해 재고가 확보되는 대로 할당됩니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 620 | ₩1,796.00 | ₩8,980.00 |
| 625 - 1245 | ₩1,748.00 | ₩8,740.00 |
| 1250 + | ₩1,724.00 | ₩8,620.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 671-0520
- Distrelec 제품 번호:
- 304-43-727
- 제조사 부품 번호:
- FDS4685
- 제조업체:
- onsemi
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 8.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 4mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 8.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Operating Temperature 150°C | ||
Width 4mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Automotive Standard No | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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