onsemi FDN337N Type N-Channel MOSFET, 2.2 A, 30 V Enhancement, 3-Pin SOT-23 FDN337N
- RS 제품 번호:
- 671-0429
- Distrelec 제품 번호:
- 304-43-435
- 제조사 부품 번호:
- FDN337N
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩6,918.40
공급 부족
- 추가로 2026년 1월 19일 부터 710 개 단위 배송
- 추가로 2026년 1월 26일 부터 9,540 개 단위 배송
당사의 현재 재고는 제한중이며, 제조사측에서는 공급 부족을 예상하고 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 740 | ₩691.84 | ₩6,918.40 |
| 750 - 1490 | ₩673.04 | ₩6,730.40 |
| 1500 + | ₩663.64 | ₩6,636.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 671-0429
- Distrelec 제품 번호:
- 304-43-435
- 제조사 부품 번호:
- FDN337N
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | FDN337N | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.92mm | |
| Width | 1.4 mm | |
| Height | 0.94mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series FDN337N | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 2.92mm | ||
Width 1.4 mm | ||
Height 0.94mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
관련된 링크들
- onsemi FDN337N Type N-Channel MOSFET, 2.2 A, 30 V Enhancement, 3-Pin SOT-23
- onsemi FDN357N Type N-Channel MOSFET, 1.9 A, 30 V Enhancement, 3-Pin SOT-23 FDN357N
- onsemi PowerTrench Type N-Channel MOSFET, 8 A, 30 V Enhancement, 3-Pin SOT-23 FDN537N
- onsemi PowerTrench Type N-Channel MOSFET, 2 A, 20 V Enhancement, 3-Pin SOT-23 FDN327N
- onsemi FDN357N Type N-Channel MOSFET, 1.9 A, 30 V Enhancement, 3-Pin SOT-23
- onsemi PowerTrench Type N-Channel MOSFET, 1.7 A, 20 V Enhancement, 3-Pin SOT-23 FDN335N
- onsemi PowerTrench Type N-Channel MOSFET, 1.6 A, 150 V Enhancement, 3-Pin SOT-23 FDN86246
- onsemi PowerTrench Type N-Channel MOSFET, 2.7 A, 100 V Enhancement, 3-Pin SOT-23 FDN8601