Infineon LogicFET N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220AB IRL3803PBF
- RS 제품 번호:
- 540-9979P
- 제조사 부품 번호:
- IRL3803PBF
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
가격 개당(튜브에 담겨 공급됨)**
₩2,712.84
2 재고있음 5-9영업일내 홍콩 발송*
* 배송 날짜는 선택한 수량과 배송 주소에 따라 달라질 수 있습니다.
재고 확인하기
수량 | 한팩당 |
|---|---|
| 13 - 24 | ₩2,712.84 |
| 25 + | ₩2,671.48 |
** 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 540-9979P
- 제조사 부품 번호:
- IRL3803PBF
- 제조업체:
- Infineon
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon LogicFET Series MOSFET, 140A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL3803PBF
This N-channel MOSFET is intended for high efficiency in power applications, with a low Rds(on) making it suitable for various electronic and mechanical systems. Through advanced processing techniques, it provides exceptional reliability in challenging environments, operating within a temperature range of -55°C to +175°C. The component is capable of supporting high power dissipation needs, making it an essential element in automation and industrial applications.
Features & Benefits
• Fast switching speed enhances overall system performance
• High continuous drain current of 140A accommodates various applications
• Low maximum drain-source resistance reduces power loss
• Dual gate-source voltage ratings offer design flexibility
• Fully avalanche rated to maintain performance under stress
• Efficient thermal management with TO-220AB package design
• High continuous drain current of 140A accommodates various applications
• Low maximum drain-source resistance reduces power loss
• Dual gate-source voltage ratings offer design flexibility
• Fully avalanche rated to maintain performance under stress
• Efficient thermal management with TO-220AB package design
Applications
• Used in power management circuits and motor control
• Suitable for industrial automation systems that require dependability
• Applied in switching power supplies for electronic devices
• Fit for renewable energy system
• Suitable for industrial automation systems that require dependability
• Applied in switching power supplies for electronic devices
• Fit for renewable energy system
What are the maximum ratings for continuous drain current?
The maximum continuous drain current is 140A at 25°C and decreases to 98A at 100°C under standard conditions.
How does the component handle thermal management?
It incorporates low thermal resistance, allowing for power dissipation up to 200W, with a linear derating factor of 1.3 W/°C.
What is the significance of its enhancement mode?
The enhancement mode permits operation without substantial gate voltage, enabling efficient control over the switching mechanism, which is essential for low-power applications.
What specific voltage ratings does it support?
It accommodates a gate-to-source voltage range of ±16V and a maximum drain-source breakdown voltage of 30V, enhancing versatility in circuit designs.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
속성 | 값 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 140 A |
| Maximum Drain Source Voltage | 30 V |
| Series | LogicFET |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 6 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 200 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Maximum Operating Temperature | +175 °C |
| Length | 10.67mm |
| Width | 4.83mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 140 nC @ 4.5 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.3V |
| Height | 9.02mm |