STMicroelectronics MASTERG Type N, Type P-Channel MOSFET, 9.7 A, 650 V Enhancement, 31-Pin QFN-9 MASTERGAN1LTR
- RS 제품 번호:
- 287-7041P
- 제조사 부품 번호:
- MASTERGAN1LTR
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal 25 units (supplied on a continuous strip)*
₩275,437.50
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 25 - 49 | ₩11,017.50 |
| 50 - 99 | ₩10,569.00 |
| 100 - 249 | ₩10,042.50 |
| 250 + | ₩9,750.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 287-7041P
- 제조사 부품 번호:
- MASTERGAN1LTR
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 9.7A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | MASTERG | |
| Package Type | QFN-9 | |
| Mount Type | Surface | |
| Pin Count | 31 | |
| Maximum Drain Source Resistance Rds | 220mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2nC | |
| Maximum Power Dissipation Pd | 40mW | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 1mm | |
| Standards/Approvals | RoHS, ECOPACK | |
| Length | 9mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 9.7A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series MASTERG | ||
Package Type QFN-9 | ||
Mount Type Surface | ||
Pin Count 31 | ||
Maximum Drain Source Resistance Rds 220mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2nC | ||
Maximum Power Dissipation Pd 40mW | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 1mm | ||
Standards/Approvals RoHS, ECOPACK | ||
Length 9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
Zero reverse recovery loss
UVLO protection on VCC
Internal bootstrap diode
Interlocking function