STMicroelectronics MASTERG Type N, Type P-Channel MOSFET, 9.7 A, 650 V Enhancement, 31-Pin QFN-9 MASTERGAN1LTR
- RS 제품 번호:
- 287-7040
- 제조사 부품 번호:
- MASTERGAN1LTR
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
Subtotal (1 reel of 3000 units)*
₩29,164,440.00
일시적 품절
- 2026년 7월 14일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 + | ₩9,721.48 | ₩29,162,748.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 287-7040
- 제조사 부품 번호:
- MASTERGAN1LTR
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.7A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | QFN-9 | |
| Series | MASTERG | |
| Mount Type | Surface | |
| Pin Count | 31 | |
| Maximum Drain Source Resistance Rds | 220mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2nC | |
| Maximum Power Dissipation Pd | 40mW | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Width | 9 mm | |
| Length | 9mm | |
| Height | 1mm | |
| Standards/Approvals | RoHS, ECOPACK | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.7A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type QFN-9 | ||
Series MASTERG | ||
Mount Type Surface | ||
Pin Count 31 | ||
Maximum Drain Source Resistance Rds 220mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2nC | ||
Maximum Power Dissipation Pd 40mW | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Width 9 mm | ||
Length 9mm | ||
Height 1mm | ||
Standards/Approvals RoHS, ECOPACK | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
Zero reverse recovery loss
UVLO protection on VCC
Internal bootstrap diode
Interlocking function
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