Vishay SIS Type N-Channel MOSFET, 178.3 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS66DN-T1-GE3
- RS 제품 번호:
- 281-6039
- Distrelec 제품 번호:
- 301-56-785
- 제조사 부품 번호:
- SISS66DN-T1-GE3
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩3,305,040.00
재고있음
- 6,000 개 단위 배송 준비 완료
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩1,101.68 | ₩3,304,476.00 |
| 6000 + | ₩1,062.20 | ₩3,188,856.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 281-6039
- Distrelec 제품 번호:
- 301-56-785
- 제조사 부품 번호:
- SISS66DN-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 178.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIS | |
| Package Type | PowerPAK 1212-8S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00138Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 24.7nC | |
| Maximum Power Dissipation Pd | 65.8W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Width | 3.3 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 178.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIS | ||
Package Type PowerPAK 1212-8S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00138Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 24.7nC | ||
Maximum Power Dissipation Pd 65.8W | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Width 3.3 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET with schottky diode has applications in synchronous rectification, synchronous buck converter, and DC/DC conversions.
TrenchFET Generation IV power MOSFET
SKYFET with monolithic schottky diode
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