제조사부품번호

Vishay SISS N-Channel MOSFET, 36 A, 40 V Enhancement, 8-Pin 1212-8 SISS4410DN-T1-GE3

RS 제품 번호:: 279-9989
제조사 부품 번호:: SISS4410DN-T1-GE3
제조업체:: Vishay

Vishay SISS N-Channel MOSFET, 36 A, 40 V Enhancement, 8-Pin 1212-8 SISS4410DN-T1-GE3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

Subtotal (1 reel of 3000 units)*

₩1,824,000.00

마지막 RS 재고

최종적인 3,000 개 unit(s)이 배송 준비 됨

수량	한팩당	릴당*
3000 +	₩608.00	₩1,823,400.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 279-9989
제조사 부품 번호:: SISS4410DN-T1-GE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	40V
	Series	SISS
	Package Type	1212-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.009Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	19.8W
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	18nC
	Maximum Operating Temperature	150°C
	Length	3.3mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 40V
	Series SISS
	Package Type 1212-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.009Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 19.8W
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 18nC
	Maximum Operating Temperature 150°C
	Length 3.3mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SISS4410DN-T1-GE3

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

Vishay SISS N-Channel MOSFET, 36 A, 40 V Enhancement, 8-Pin 1212-8 SISS4410DN-T1-GE3

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