Vishay SiR Type N-Channel MOSFET, 47.6 A, 100 V Enhancement, 8-Pin SO-8 SIR5110DP-T1-RE3
- RS 제품 번호:
- 279-9943
- 제조사 부품 번호:
- SIR5110DP-T1-RE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
Subtotal (1 reel of 3000 units)*
₩4,292,040.00
현재 액세스할 수 없는 재고 정보
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 + | ₩1,430.68 | ₩4,291,476.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 279-9943
- 제조사 부품 번호:
- SIR5110DP-T1-RE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 47.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SiR | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0125Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 59.5W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5.15mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 47.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SiR | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0125Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 59.5W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5.15mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
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