Infineon CoolMOSTMPFD7 MOSFET, 16 A, 650 V Enhancement, 3-Pin PG-TO-220
- RS 제품 번호:
- 273-7461
- 제조사 부품 번호:
- IPAN60R210PFD7SXKSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩6,128.80
재고있음
- 추가로 2025년 12월 29일 부터 500 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩3,064.40 | ₩6,128.80 |
| 10 - 18 | ₩2,547.40 | ₩5,094.80 |
| 20 - 98 | ₩2,500.40 | ₩5,000.80 |
| 100 - 248 | ₩2,049.20 | ₩4,098.40 |
| 250 + | ₩1,880.00 | ₩3,760.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-7461
- 제조사 부품 번호:
- IPAN60R210PFD7SXKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO-220 | |
| Series | CoolMOSTMPFD7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO-220 | ||
Series CoolMOSTMPFD7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET offers Cool MOS revolutionary technology for high voltage power MOSFETs. It is designed according to the super junction principle and pioneered by Infineon Technologies. The latest Cool MOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor drive, lighting, etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price to performance ratio and state of the art ease of use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
Fast body diode
Extremely low losses
Low switching losses Eoss
Excellent thermal behaviour
Excellent commutation ruggedness
관련된 링크들
- Infineon CoolMOSTMPFD7 MOSFET, 16 A, 650 V Enhancement, 3-Pin PG-TO-220 IPAN60R210PFD7SXKSA1
- Infineon IPA Type N-Channel MOSFET, 26 A, 650 V N TO-220
- Infineon IPA Type N-Channel MOSFET, 66 A, 650 V N TO-220
- Infineon IPA Type N-Channel MOSFET, 26 A, 650 V N TO-220 IPAN60R360PFD7SXKSA1
- Infineon IPA Type N-Channel MOSFET, 66 A, 650 V N TO-220 IPAN60R125PFD7SXKSA1
- Infineon CoolMOSTM P7 MOSFET, 18 A, 600 V Enhancement, 3-Pin PG-TO-220
- Infineon CoolMOSTM P7 MOSFET, 18 A, 600 V Enhancement, 3-Pin PG-TO-220 IPAN60R180P7SXKSA1
- Infineon IPN Type N-Channel MOSFET, 3.6 A, 650 V Enhancement, 3-Pin PG-SOT223
