Infineon OptiMOS N-Channel MOSFET, 106 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL BSZ0902NSATMA1

RS 제품 번호:: 273-5248
제조사 부품 번호:: BSZ0902NSATMA1
제조업체:: Infineon

Infineon OptiMOS N-Channel MOSFET, 106 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL BSZ0902NSATMA1

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Subtotal (1 pack of 10 units)*

₩79,200.00

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20 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
10 - 40	₩7,920.00	₩79,200.00
50 - 490	₩7,682.00	₩76,820.00
500 - 990	₩7,528.00	₩75,280.00
1000 - 2490	₩7,376.00	₩73,760.00
2500 +	₩7,228.00	₩72,280.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 273-5248
제조사 부품 번호:: BSZ0902NSATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	106A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PG-TSDSON-8FL
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.5mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	48W
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	26nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 106A
	Maximum Drain Source Voltage Vds 30V
	Package Type PG-TSDSON-8FL
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.5mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 48W
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 26nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56
	Automotive Standard No

Datasheet - BSZ0902NSATMA1

Infineon OptiMOS Series MOSFET, 30V Maximum Drain-Source Voltage, 106A Maximum Continuous Drain Current - BSZ0902NSATMA1

This MOSFET is an N-channel enhancement-mode power transistor designed for surface-mount use in high-current switching and power-conversion roles. It supports wide operating temperatures and is suitable for designs requiring robust thermal handling and reduced conduction losses. The device conforms to relevant material and environmental standards while being configured for low-profile PCB integration.

Features and Benefits:

• 3.5mΩ low on-resistance reduces conduction losses and improves efficiency
• 48W power dissipation enables sustained thermal-load handling
• 26nC typical gate charge allows Faster switching with controlled drive requirements
• 20V maximum gate voltage provides margin for gate-drive designs
• -55°C to 150°C rated operation supports broad thermal environments

Applications

• Suitable for high-current DC-DC converters and power stages
• Ideal for synchronous rectification in power-supply circuits
• Used for motor-drive stages requiring substantial continuous current
• Can be used for battery-management and distribution protection
• Used with Compact surface-mounted assemblies on thermally managed boards

What package is provided for low-profile surface mounting?

It is supplied in a PG-TSDSON-8FL package designed for surface-mount assembly.

How does the component handle short-term thermal stress?

The device permits a maximum power dissipation of 48W which governs its thermal endurance under load when adequate PCB cooling is applied.

What are the electrical limits for gate and drain terminals?

The gate may be driven up to 20V while the drain-to-source withstands up to 30V.

Is this part intended for automotive-spec applications?

It is not classified as automotive-grade but meets RoHS and specified IEC and DIN environmental and material standards.