Infineon OptiMOSa5 Type N-Channel MOSFET, 112 A, 150 V Enhancement, 3-Pin PG-TO262-3 IPI076N15N5AKSA1
- RS 제품 번호:
- 273-3013
- 제조사 부품 번호:
- IPI076N15N5AKSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩209,902.00
재고있음
- 450 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩4,198.04 | ₩209,939.60 |
| 100 + | ₩3,899.12 | ₩194,937.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-3013
- 제조사 부품 번호:
- IPI076N15N5AKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 112A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PG-TO262-3 | |
| Series | OptiMOSa5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 214W | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDECforIndustrialApplications, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 112A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PG-TO262-3 | ||
Series OptiMOSa5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 214W | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDECforIndustrialApplications, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFETs are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications.
Higher power density designs
More rugged products
System cost reduction
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