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Infineon OptiMOS Type N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin PG-TO263-3 IPB65R050CFD7AATMA1

RS 제품 번호:: 273-2775
제조사 부품 번호:: IPB65R050CFD7AATMA1
제조업체:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin PG-TO263-3 IPB65R050CFD7AATMA1

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Subtotal (1 reel of 1000 units)*

₩6,645,800.00

일시적 품절

2026년 3월 30일 부터 배송

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수량	한팩당	릴당*
1000 +	₩6,645.80	₩6,646,552.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 273-2775
제조사 부품 번호:: IPB65R050CFD7AATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	45A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-TO263-3
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.05Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	102nC
	Maximum Power Dissipation Pd	227W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 45A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-TO263-3
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.05Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 102nC
	Maximum Power Dissipation Pd 227W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPB65R050CFD7AATMA1

The Infineon MOSFET is a 650V CoolMOS CFD7A power device, It is a Infineon latest generation of market leading automotive qualified high voltage CoolMOS MOSFETs. In addition to the well known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFD7A series provides for an integrated fast body diode and can be used for PFC and resonant switching topologies like the ZVS phase shift full bridge and LLC.

Lower switching losses

High quality and reliability

100 percent avalanche tested

Optimized for higher battery voltages

Infineon OptiMOS Type N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin PG-TO263-3 IPB65R050CFD7AATMA1

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