Vishay SQJ Type N-Channel MOSFET, 66 A, 80 V Enhancement, 4-Pin PowerPAK SO-8L SQJ186ELP-T1_GE3
- RS 제품 번호:
- 268-8364
- 제조사 부품 번호:
- SQJ186ELP-T1_GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
Subtotal (1 reel of 3000 units)*
₩1,889,400.00
일시적 품절
- 2026년 7월 27일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 + | ₩629.80 | ₩1,891,656.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 268-8364
- 제조사 부품 번호:
- SQJ186ELP-T1_GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK SO-8L | |
| Series | SQJ | |
| Mount Type | PCB | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.032Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 135W | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 4.9mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK SO-8L | ||
Series SQJ | ||
Mount Type PCB | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.032Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 135W | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 4.9mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It is single configuration device and that has independent of operating temperature.
AEC Q101 qualified
ROHS compliant
UIS tested 100 percent
관련된 링크들
- Vishay SQJ Type N-Channel MOSFET, 66 A, 80 V Enhancement, 4-Pin PowerPAK SO-8L SQJ186ELP-T1_GE3
- Vishay SQJ142ELP Type N-Channel MOSFET, 175 A, 40 V Enhancement, 4-Pin SO-8 SQJ142ELP-T1_GE3
- Vishay SQJ152ELP Type N-Channel MOSFET, 123 A, 40 V Enhancement, 4-Pin SO-8 SQJ152ELP-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET, 350 A, 40 V Enhancement, 4-Pin PowerPAK SO-8L SQJ136ELP-T1_GE3
- Vishay SQJ131ELP Type P-Channel Single MOSFETs, -300 A, -30 V Enhancement, 4-Pin PowerPAK SQJ131ELP-T1_GE3
- Vishay SQJ141ELP Type P-Channel Single MOSFETs, -232 A, -40 V Enhancement, 4-Pin PowerPAK SQJ185ELP-T1_GE3
- Vishay SQJ141ELP Type P-Channel Single MOSFETs, -232 A, -40 V Enhancement, 4-Pin PowerPAK SQJ141ELP-T1_GE3
- Vishay SQJ142ELP Type N-Channel MOSFET, 175 A, 40 V Enhancement, 4-Pin SO-8