Renesas Electronics ISL6144 Type N-Channel MOSFET, 8 A, 12 V Enhancement, 20-Pin QFN ISL6144IRZA
- RS 제품 번호:
- 263-0247
- 제조사 부품 번호:
- ISL6144IRZA
- 제조업체:
- Renesas Electronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩12,163.60
마지막 RS 재고
- 최종적인 980 개 unit(s)이 배송 준비 됨
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩12,163.60 |
| 10 - 24 | ₩10,998.00 |
| 25 - 119 | ₩10,471.60 |
| 120 - 299 | ₩9,099.20 |
| 300 + | ₩8,666.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 263-0247
- 제조사 부품 번호:
- ISL6144IRZA
- 제조업체:
- Renesas Electronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Renesas Electronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | QFN | |
| Series | ISL6144 | |
| Mount Type | Surface | |
| Pin Count | 20 | |
| Maximum Drain Source Resistance Rds | 19mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Forward Voltage Vf | 20mV | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 105°C | |
| Standards/Approvals | No | |
| Height | 6.4mm | |
| Length | 5mm | |
| Width | 0.9 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Renesas Electronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type QFN | ||
Series ISL6144 | ||
Mount Type Surface | ||
Pin Count 20 | ||
Maximum Drain Source Resistance Rds 19mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Forward Voltage Vf 20mV | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 105°C | ||
Standards/Approvals No | ||
Height 6.4mm | ||
Length 5mm | ||
Width 0.9 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Renesas Electronics MOSFETs controller provides a suitably sized n-channel power MOSFET which increases power distribution efficiency and availability when replacing a power ORing diode in high current applications. It also consist of a reverse current fault isolation.
Open drain, active low fault output
Internal charge pump
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