Infineon HEXFET N-Channel MOSFET, 16 A, 100 V Enhancement, 3-Pin TO-251 IRFU3910PBF

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포장 옵션
RS 제품 번호:
262-6776
Distrelec 제품 번호:
304-41-680
제조사 부품 번호:
IRFU3910PBF
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

115mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

52W

Typical Gate Charge Qg @ Vgs

29.3nC

Maximum Operating Temperature

175°C

Height

2.39mm

Standards/Approvals

RoHS

Width

6.22mm

Length

6.73mm

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It has ultra low on-resistance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Fast switching

Fully avalanche rated

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