Infineon HEXFET Type N-Channel MOSFET, 61 A, 55 V TO-252 IRLR3915TRPBF
- RS 제품 번호:
- 258-3999
- 제조사 부품 번호:
- IRLR3915TRPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩4,775.20
재고있음
- 1,474 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩2,387.60 | ₩4,775.20 |
| 10 - 98 | ₩2,274.80 | ₩4,549.60 |
| 100 - 248 | ₩2,133.80 | ₩4,267.60 |
| 250 - 498 | ₩1,983.40 | ₩3,966.80 |
| 500 + | ₩1,823.60 | ₩3,647.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-3999
- 제조사 부품 번호:
- IRLR3915TRPBF
- 제조업체:
- Infineon
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참조 문서
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제품 세부 사항
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 120W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-40-553 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 120W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Distrelec Product Id 304-40-553 | ||
The Infineon HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Fast Switching
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