제조사부품번호

Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON IRF6646TRPBF

RS 제품 번호:: 258-3963
제조사 부품 번호:: IRF6646TRPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON IRF6646TRPBF

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩7,275.60

재고있음

4,688 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 8	₩3,637.80	₩7,275.60
10 - 98	₩3,449.80	₩6,899.60
100 - 248	₩3,252.40	₩6,504.80
250 - 498	₩3,026.80	₩6,053.60
500 +	₩2,773.00	₩5,546.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 258-3963
제조사 부품 번호:: IRF6646TRPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	68A
	Maximum Drain Source Voltage Vds	80V
	Series	HEXFET
	Package Type	WDSON
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	9.5mΩ
	Typical Gate Charge Qg @ Vgs	36nC
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	89W
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 68A
	Maximum Drain Source Voltage Vds 80V
	Series HEXFET
	Package Type WDSON
	Mount Type Surface
	Maximum Drain Source Resistance Rds 9.5mΩ
	Typical Gate Charge Qg @ Vgs 36nC
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 89W
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF6646TRPBF

The Infineon HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes.

Application Specific MOSFETs

Ideal for High Performance Isolated Converter

Primary Switch Socket

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Technique

Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON IRF6646TRPBF

관련된 링크들