Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON IRF6646TRPBF
- RS 제품 번호:
- 258-3963
- 제조사 부품 번호:
- IRF6646TRPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩7,546.50
재고있음
- 추가로 2026년 5월 11일 부터 4,688 개 단위 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩3,773.25 | ₩7,546.50 |
| 10 - 98 | ₩3,578.25 | ₩7,156.50 |
| 100 - 248 | ₩3,373.50 | ₩6,747.00 |
| 250 - 498 | ₩3,139.50 | ₩6,279.00 |
| 500 + | ₩2,876.25 | ₩5,752.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-3963
- 제조사 부품 번호:
- IRF6646TRPBF
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | HEXFET | |
| Package Type | WDSON | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 9.5mΩ | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series HEXFET | ||
Package Type WDSON | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 9.5mΩ | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes.
Application Specific MOSFETs
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Technique
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