Infineon IPP Type N-Channel MOSFET, 120 A, 80 V, 3-Pin TDSON
- RS 제품 번호:
- 258-3890
- 제조사 부품 번호:
- IPP034N08N5AKSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩109,416.00
재고있음
- 300 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩2,188.32 | ₩109,397.20 |
| 100 - 100 | ₩1,968.36 | ₩98,455.60 |
| 150 + | ₩1,910.08 | ₩95,504.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-3890
- 제조사 부품 번호:
- IPP034N08N5AKSA1
- 제조업체:
- Infineon
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | IPP | |
| Package Type | TDSON | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.4mΩ | |
| Forward Voltage Vf | 0.97V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 167W | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series IPP | ||
Package Type TDSON | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.4mΩ | ||
Forward Voltage Vf 0.97V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 167W | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 80 V power MOSFET, especially designed for synchronous rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS 5 80 V MOSFETs offer the industry's lowest RDS(on). Additionally, compared to the previous generation, OptiMOS 5 80 V has an RDS(on) reduction of up to 43%.
Ideal for high switching frequency
Output capacitance reduction of up to 44 %
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
관련된 링크들
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- Infineon OptiMOS Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-220
