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Infineon IMBG Type N-Channel MOSFET, 64 A, 75 V N, 7-Pin TO-263 IMBG65R057M1HXTMA1

RS 제품 번호:: 248-9319
제조사 부품 번호:: IMBG65R057M1HXTMA1
제조업체:: Infineon

Infineon IMBG Type N-Channel MOSFET, 64 A, 75 V N, 7-Pin TO-263 IMBG65R057M1HXTMA1

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Subtotal (1 unit)*

₩12,351.60

재고있음

2,000 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩12,351.60
10 - 99	₩11,975.60
100 - 249	₩11,618.40
250 - 499	₩11,280.00
500 +	₩10,941.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 248-9319
제조사 부품 번호:: IMBG65R057M1HXTMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	64A
	Maximum Drain Source Voltage Vds	75V
	Package Type	TO-263
	Series	IMBG
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 64A
	Maximum Drain Source Voltage Vds 75V
	Package Type TO-263
	Series IMBG
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMBG65R057M1HXTMA1

The Infineon SiC MOSFET is a 650 V CoolSiC is built over the solid silicon carbide technology, leveraging the wide bandgap SiC material characteristics, the 650 V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use, suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.

Optimized switching behaviour at higher currents

Commutation robust fast body diode with low Qf

Superior gate oxide reliability

Tj,max-175°C and excellent thermal behaviour

Lower RDS(on) and pulse current dependency on temperature

Increased avalanche capability

Compatible with standard drivers

Kelvin source provides upto 4 times lower switching losses

Infineon IMBG Type N-Channel MOSFET, 64 A, 75 V N, 7-Pin TO-263 IMBG65R057M1HXTMA1

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