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Infineon IMZA Type N-Channel MOSFET, 225 A, 75 V N, 4-Pin TO-247

RS 제품 번호:: 248-6675
제조사 부품 번호:: IMZA120R014M1HXKSA1
제조업체:: Infineon

Infineon IMZA Type N-Channel MOSFET, 225 A, 75 V N, 4-Pin TO-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 240 units)*

₩8,005,190.40

일시적 품절

2026년 9월 14일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
240 - 240	₩33,354.96	₩8,005,145.28
480 - 480	₩31,687.40	₩7,604,885.76
720 +	₩30,736.12	₩7,376,759.04

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 248-6675
제조사 부품 번호:: IMZA120R014M1HXKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	225A
	Maximum Drain Source Voltage Vds	75V
	Series	IMZA
	Package Type	TO-247
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	N
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 225A
	Maximum Drain Source Voltage Vds 75V
	Series IMZA
	Package Type TO-247
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode N
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMZA120R014M1HXKSA1

The Infineon CoolSiC 1200 V, 14 mΩ SiC MOSFET in TO247-4 package build on a state of the art trench semiconductor process optimized to combine performance with reliability, these includes, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic and the CoolSiC MOSFETs are ideal for hard and resonant switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.

VDSS - 1200 V at T - 25°C

IDCC - 127 A at T - 25°C

RDS(on) - 14 mohm at VGS - 18 V, T - 25°C

Very low switching losses

Short circuit withstand time 3 microsecond

Benchmark gate threshold voltage, VGS(th) - 4.2 V

Robust against parasitic turn on, 0 V turn-off gate voltage can be applied

Robust body diode for hard commutation

XT interconnection technology for best-in-class thermal performance

Infineon IMZA Type N-Channel MOSFET, 225 A, 75 V N, 4-Pin TO-247

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