Infineon AUIRFS Type N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-252
- RS 제품 번호:
- 244-2876
- 제조사 부품 번호:
- AUIRFR3806TRL
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩5,030,880.00
일시적 품절
- 2026년 3월 30일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩1,676.96 | ₩5,032,572.00 |
| 6000 - 6000 | ₩1,643.12 | ₩4,932,180.00 |
| 9000 + | ₩1,594.24 | ₩4,783,848.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 244-2876
- 제조사 부품 번호:
- AUIRFR3806TRL
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | AUIRFS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series AUIRFS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon AUIRFR2905ZTRL specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficientand reliable device for use in Automotive applications and a widevariety of other applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
관련된 링크들
- Infineon AUIRFS Type N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-252 AUIRFR3806TRL
- Infineon AUIRFS Type N-Channel MOSFET, 24 A, 200 V, 3-Pin TO-252
- Infineon AUIRFS Type N-Channel MOSFET, 24 A, 200 V, 3-Pin TO-252 AUIRFR4620TRL
- Infineon AUIRFS Type N-Channel MOSFET, 42 A, 75 V, 3-Pin TO-263
- Infineon AUIRFS Type N-Channel MOSFET, 35 A, 100 V, 3-Pin TO-252
- Infineon AUIRFS Type N-Channel MOSFET, 59 A, 55 V, 3-Pin TO-252
- Infineon AUIRFS Type P-Channel MOSFET, 230 A, 75 V, 3-Pin TO-252
- Infineon AUIRFS Type N-Channel MOSFET, 42 A, 75 V, 3-Pin TO-263 AUIRFR2407TRL