Infineon IST Type N-Channel MOSFET, 475 A, 40 V Enhancement, 5-Pin HSOF IST006N04NM6AUMA1
- RS 제품 번호:
- 235-0605
- 제조사 부품 번호:
- IST006N04NM6AUMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 reel of 2000 units)*
₩5,576,080.00
일시적 품절
- 2026년 5월 29일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2000 - 2000 | ₩2,788.04 | ₩5,576,456.00 |
| 4000 - 4000 | ₩2,731.64 | ₩5,464,784.00 |
| 6000 + | ₩2,650.80 | ₩5,300,848.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 235-0605
- 제조사 부품 번호:
- IST006N04NM6AUMA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 475A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IST | |
| Package Type | HSOF | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 0.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.4 mm | |
| Standards/Approvals | No | |
| Length | 6.9mm | |
| Height | 7.2mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 475A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IST | ||
Package Type HSOF | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 0.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Operating Temperature 175°C | ||
Width 2.4 mm | ||
Standards/Approvals No | ||
Length 6.9mm | ||
Height 7.2mm | ||
Automotive Standard No | ||
The Infineon OptiMOSTM6 power transistor operated on 40V and drain current of 475A. It is in Stoll package features very low RDS(on) of 0.60mOhm. It has the advantages of Infineons well known quality level for robust industry packages making it the Ideal solution for various performance in battery powered applications, battery protection and battery formation.
Optimized for low voltage motor drives application
Optimized for battery power applications
Very low on-resistance RDS(on)
100% avalanche tested
Superior thermal performance
N-channel
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