- RS 제품 번호:
- 232-0398
- 제조사 부품 번호:
- IMW65R107M1HXKSA1
- 제조업체:
- Infineon
180 <재고있음> 5-9영업일내 홍콩 발송
추가완료!
단가 개당가격(30개가 1튜브안에)
₩14,697.873
수량 | 한팩당 | Per Tube* |
30 - 30 | ₩14,697.873 | ₩440,915.488 |
60 - 60 | ₩13,961.341 | ₩418,860.917 |
90 + | ₩13,264.481 | ₩397,918.906 |
*다른 단위에 대한 가격 표시 |
- RS 제품 번호:
- 232-0398
- 제조사 부품 번호:
- IMW65R107M1HXKSA1
- 제조업체:
- Infineon
제정법과 컴플라이언스
제품 세부 사항
The Infineon has SiC MOSFET delivering reliable and cost-effective performance in TO247 3-pin package. The CoolSiC MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the devices performance, robustness, and ease of use. The MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation.
Low capacitances
Optimized switching behaviour at higher currents
Superior gate oxide reliability
Excellent thermal behaviour
Increased avalanche capability
Works with standard drivers
Optimized switching behaviour at higher currents
Superior gate oxide reliability
Excellent thermal behaviour
Increased avalanche capability
Works with standard drivers
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
사양
속성 | 값 |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 20 A |
Maximum Drain Source Voltage | 650 V |
Package Type | TO-247 |
Series | CoolSiC |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 0.142 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5.7V |
Number of Elements per Chip | 1 |
Transistor Material | Silicon |