Infineon IPC Type N-Channel MOSFET, 50 A, 40 V Enhancement, 8-Pin SuperSO
- RS 제품 번호:
- 229-1829
- 제조사 부품 번호:
- IPC50N04S55R8ATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 reel of 5000 units)*
₩2,622,600.00
재고있음
- 추가로 2026년 2월 16일 부터 35,000 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 5000 - 5000 | ₩524.52 | ₩2,618,840.00 |
| 10000 - 10000 | ₩513.24 | ₩2,567,140.00 |
| 15000 + | ₩503.84 | ₩2,515,440.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 229-1829
- 제조사 부품 번호:
- IPC50N04S55R8ATMA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO | |
| Series | IPC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 42W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.58 mm | |
| Length | 5.25mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO | ||
Series IPC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 42W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Operating Temperature 175°C | ||
Width 5.58 mm | ||
Length 5.25mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
40V, N-Ch, 0.9 mΩ max, Automotive MOSFET, PQNF, OptiMOS™-6
Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications.
All of this enables the Best-in-Class product FOM (RDSon x Qg) and performance on the market. The new SS08 product offers 120A continuous current ratings, which is >25% higher than the standard DPAK at almost half of its footprint area.
Additionally, the new generation of the SS08 package enables superior switching performance and EMI behavior due to very low package inductance (≈4x lower package inductivity vs traditional packages e.g. DPAK, D²PAK) by using the new copper-clip intercontact technology.
Summary of Features
•OptiMOS™ - power MOSFET for automotive applications
•N-channel - Enhancement mode - Normal Level
•AEC Q101 qualified
•MSL1 up to 260°C peak reflow
•175°C operating temperature
•Green Product (RoHS compliant)
•100% Avalanche tested
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