Vishay TrenchFET Type N-Channel MOSFET, 51.4 A, 100 V Enhancement, 8-Pin SO-8 SiR876BDP-T1-RE3
- RS 제품 번호:
- 228-2912
- 제조사 부품 번호:
- SiR876BDP-T1-RE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩17,433.00
마지막 RS 재고
- 최종적인 18,710 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 40 | ₩1,743.30 | ₩17,433.00 |
| 50 - 90 | ₩1,712.10 | ₩17,121.00 |
| 100 - 240 | ₩1,680.90 | ₩16,809.00 |
| 250 - 990 | ₩1,651.65 | ₩16,516.50 |
| 1000 + | ₩1,620.45 | ₩16,204.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 228-2912
- 제조사 부품 번호:
- SiR876BDP-T1-RE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 51.4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 71.4W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42.7nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 51.4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 71.4W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42.7nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 100 V MOSFET.
100 % Rg and UIS tested
관련된 링크들
- Vishay TrenchFET Type N-Channel MOSFET, 51.4 A, 100 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin SO-8 SiR880BDP-T1-RE3
- Vishay SiR870BDP Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiR870BDP-T1-RE3
- Vishay SiR882BDP Type N-Channel MOSFET, 67.5 A, 100 V Enhancement, 8-Pin SO-8 SiR882BDP-T1-RE3
- Vishay SiR870BDP Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8
- Vishay SiR882BDP Type N-Channel MOSFET, 67.5 A, 100 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET, 350.8 A, 30 V Enhancement, 8-Pin SO-8 SiR500DP-T1-RE3