N-Channel MOSFET, 225 A, 100 V, 4-Pin PowerPAK 8 x 8L Vishay SIJH112E-T1-GE3

RS 제품 번호:: 228-2895P
제조사 부품 번호:: SIJH112E-T1-GE3
제조업체:: Vishay

N-Channel MOSFET, 225 A, 100 V, 4-Pin PowerPAK 8 x 8L Vishay SIJH112E-T1-GE3

RS 제품 번호:: 228-2895P
제조사 부품 번호:: SIJH112E-T1-GE3
제조업체:: Vishay

Datasheet - SIJH112E-T1-GE3

속성	값
Channel Type	N
Maximum Continuous Drain Current	225 A
Maximum Drain Source Voltage	100 V
Series	TrenchFET
Package Type	PowerPAK 8 x 8L
Mounting Type	Surface Mount
Pin Count	4
Maximum Drain Source Resistance	0.0028 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Number of Elements per Chip	1
Transistor Material	Si