STMicroelectronics Type N-Channel MOSFET, 45 A, 650 V Enhancement, 7-Pin H2PAK
- RS 제품 번호:
- 224-9997
- 제조사 부품 번호:
- SCTH35N65G2V-7AG
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 224-9997
- 제조사 부품 번호:
- SCTH35N65G2V-7AG
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3.3V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.4mm | |
| Width | 4.8 mm | |
| Height | 15.25mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3.3V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Operating Temperature 175°C | ||
Length 10.4mm | ||
Width 4.8 mm | ||
Height 15.25mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
관련된 링크들
- STMicroelectronics Type N-Channel MOSFET, 45 A, 650 V Enhancement, 7-Pin H2PAK SCTH35N65G2V-7AG
- STMicroelectronics SCTH90 Type N-Channel MOSFET, 116 A, 650 V Enhancement, 7-Pin H2PAK
- STMicroelectronics SCTH90 Type N-Channel MOSFET, 116 A, 650 V Enhancement, 7-Pin H2PAK SCTH90N65G2V-7
- STMicroelectronics SCT Type N-Channel MOSFET, 95 A, 650 V Depletion, 7-Pin H2PAK
- STMicroelectronics SCT Type N-Channel MOSFET, 95 A, 650 V Depletion, 7-Pin H2PAK SCTH100N65G2-7AG
- STMicroelectronics SCTH40N Type N-Channel MOSFET, 33 A, 1200 V Enhancement, 7-Pin H2PAK
- STMicroelectronics SCTH40N Type N-Channel MOSFET, 33 A, 1200 V Enhancement, 7-Pin H2PAK SCTH40N120G2V-7
- STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7