Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin TO-220 FP Infineon IPA60R180C7XKSA1

The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Qualified for standard grade applications according to JEDEC standards

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