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Infineon HEXFET Type N-Channel MOSFET & Diode, 86 A, 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRLPBF

RS 제품 번호:: 220-7496
제조사 부품 번호:: IRFR3709ZTRLPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET & Diode, 86 A, 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRLPBF

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대량 구매 할인 기용 가능

Subtotal (1 pack of 20 units)*

₩19,476.80

재고있음

1,160 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
20 - 740	₩973.84	₩19,458.00
760 - 1480	₩949.40	₩18,988.00
1500 +	₩934.36	₩18,687.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 220-7496
제조사 부품 번호:: IRFR3709ZTRLPBF
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	86A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	6.5mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	26nC
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	79W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Standards/Approvals	No
	Height	6.22mm
	Width	2.39 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 86A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 6.5mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 26nC
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 79W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Standards/Approvals No
	Height 6.22mm
	Width 2.39 mm
	Automotive Standard No

Datasheet - IRFR3709ZTRLPBF

The Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Industry-leading quality

Low RDS(ON) at 4.5V VGS

Fully Characterized Avalanche Voltage and Current

Ultra-Low Gate Impedance

Infineon HEXFET Type N-Channel MOSFET & Diode, 86 A, 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRLPBF

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